document number: 89393 for technical questions within your region, please contact one of the following: www.vishay.com revision: 20-dec-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 low v f single-phase single in-line bridge rectifiers lvb2560 vishay general semiconductor new product features ? ul recognition file number e54214, vol. 1 ? thin single in-iine package ? oxide planar chip junction ? low forward voltage drop ? high surge current capability ? high case dielectric strength of 2500 v rms ? solder dip 275 c max. 10 s, per jesd 22-b106 ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications general purpose use in ac/dc bridge full wave rectification for switching power supply, home appliances and white-goods applications sp ecially for telecom power supply, high efficiency desktop pc and server smps: mechanical data case: gsib-5s epoxy meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: as marked on body mounting torque: 10 cm-kg (8.8 in-lbs) maximum recommended torque: 5.7 cm-kg (5 in-lbs) notes (1) unit case mounted on aluminum plate heatsink (2) units mounted on pcb without heatsink primary characteristics i f(av) 25 a v rrm 600 v i fsm 550 a i r 10 a v f at i f = 12.5 a, t a = 125 c 0.76 v t j max. 150 c case style gsib-5s ~ ~ ~ ~ maximum ratings (t a = 25 c unless otherwise noted) parameter symbol lvb2560 unit maximum repetitive pe ak reverse voltage v rrm 600 v maximum average forward rectified output current at t c = 105 c i o (1) 25 a t a = 25 c i o (2) 3.6 non-repetiitive peak forward surge current 8.3 ms single sine-wave, t j = 25 c i fsm 550 a rating for fusing (t < 8.3 ms) t j = 25 c i 2 t 1255 a 2 s operating junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 89393 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 20-dec-10 lvb2560 vishay general semiconductor new product notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms notes (1) with heatsink (2) without heatsink, free air note (1) immunity to iec 61000-4-5 peak pu lse voltage test, 1.2/50 s, 2 ? , 5 times each of positive and negative polarity test ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - derating curve outp ut rectified current fig. 2 - forward current derating curve electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit instantaneous forward voltage i f = 12.5 a t a = 25 c v f (1) 0.89 0.92 v t a = 125 c 0.76 - reverse current per diode v r = 600 v t a = 25 c i r (2) 0.2 10 a t a = 125 c 140 - typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 1.8 - s typical junction capacitance 4.0 v, 1 mhz c j 330 - pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol lvb2560 unit maximum thermal resistance r ? ja (2) 25 c/w r ? jc (1) 1.0 emc surge immunity test standard (t a = 25 c, unless otherwise noted) standard test type test conditions symbol class value iec 61000-4-5 power supply coupling mode, li ne to line 1.2/50 s waveform, r = 2 ? , t a = 25 c (1) v peak -6 kv maximum ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode lvb2560-m3/45 7.1 45 20 tube 0 15 20 60 40 20 0 8 0 100 120 10 5 temperat u re (c) a v erage for w ard o u tp u t c u rrent (a) 140 160 25 30 with heatsink, sine-wa v e, r-load t c meas u rement am b ient temperat u re (c) a v erage for w ard rectified c u rrent (a) 5 4 0 0 25 50 75 100 125 150 3 2 1 without heat s ink s ine-wave, r-load, free air, t a
document number: 89393 for technical questions within your region, please contact one of the following: www.vishay.com revision: 20-dec-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 lvb2560 vishay general semiconductor new product fig. 3 - forward power dissipation fig. 4 - typical forward characteristics per diode fig. 5 - typical reverse characteristics per diode fig. 6 - typical juncti on capacitance per diode package outline dimensions in millimeters 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 forward power di ss ipation (w) average forward current ( a ) instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 0.1 1 10 100 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 t a = 100 c t a = 25 c t a = 125 c t a = 150 c percent of rated peak rever s e voltage (%) in s tantaneou s rever s e current (a) 0.01 0 .1 1 10 100 1000 10 20 30 40 50 60 70 80 90 100 t a = 25 c t a = 100 c t a = 150 c t a = 125 c 1000 1 10 100 re v erse voltage (v) j u nction capacitance (pf) 0.1 1 10 100 t j = 25 c f = 1 mhz v s tg = 50 mv p-p 2.5 0.2 2.2 0.2 1 0.1 10 0.2 7.5 0.2 4 0.2 5 20 0.3 17 . 5 0.5 11 0.2 2.7 0.2 3.5 0.2 3.2 0.2 0.7 0.1 4.6 0.2 3.6 0.2 + 7.5 0.2 30 0.3 case style gsib-5s
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